Extending ArF to the 65-nm node with full-phase lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5040 II, Issue , 2003, Pages 1091-1102

  Driessen, Frank ^c   Pierrat, Christophe ^b   Vandenberghe, Geert ^a   Ronse, Kurt ^a   Van Adrichem, Paul ^c   Liu, Hua Yu ^b  

^a IMEC   (Belgium)

^b SYNOPSYS INC   (United States)

^c NONE

Author keywords

193; 65 nm node; ArF; CMOS; Double exposure; Phase shift; Resolution enhancement

Indexed keywords

DESIGN FOR TESTABILITY; MASKS; NANOTECHNOLOGY; PHASE SHIFT; PHOTORESISTS;

CRITICAL DIMENSION; FULL PHASE LITHOGRAPHY; OPTICAL PROXIMITY CORRECTIONS; RESOLUTION ENHANCEMENT;

PHOTOLITHOGRAPHY;

EID: 0141610187     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.485426     Document Type: Conference Paper

References (7)

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3. G. Vandenberghe, Frank Driessen, Paul van Adrichem, K. Ronse, Jason Li and Linard Karklin; "Performance Optimization of the Double Exposure Alternating PSM for sub-100nm ICs," Proceedings of SPIE (BACUS), Vol. 4564, 2001.
4. Frank Driessen, G. Vandenberghe, Monique Ercken, Patrick Montgomery, Kurt Ronse, Paul van Adrichem, Jason Li Hua-Yu Liu and Linard Karklin, "Complementary Phase-Shift Mask towards 70-nm Technology Node," Proceedings of SPIE, Vol. 4691, 2002, p. 1769-1780
5. F.A.J.M. Driessen, Another view of extending ArF to the 65-nm node, Microlithography World, Nov. 2002.
6. Y.T. Wang et al., US Patent number 5,858,580 (Jan. 12, 1999)
7. Christopher Pierrat, Michel Côté, Kyle Patterson, New alternating phase-shifting mask conversion methodology using phase-conflict resolution, Proceedings of SPIE, Vol. 4691, 2002, p.325.