Another view on extending ArF to the 65 nm node

Microlithography World

Volumn 11, Issue 4, 2002, Pages

  Driessen, Frank ^a  

^a Numerical Technologies Inc   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; MASKS; PHASE SHIFT; PROCESS CONTROL; TRANSISTORS;

BINARY INTENSITY MASKS (BIM);

LITHOGRAPHY;

EID: 17644438963     PISSN: 1074407X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Review

References (6)

1. M. Levenson, N. Viswanathan, R. Simpson, "Improving Resolution in Photolithography with a Phase-shifting Mask," IEEE Transactions on Electron Devices, Vol. 29, p. 1812, 1982.
2. G. Vandenberghe et al., "Performance Optimization of the Double Exposure Alternating PSM for sub-100 nm ICs," SPIE 2001 Proceedings, Vol. 4564.
3. F. Driessen et al., "Complementary Phase-shift Mask Towards 70 nm Technology Node," SPIE 2002 Proceedings, Vol. 4691.
4. Y.T. Wang, Y.C. Pati, US Patent number 5,858,580 (Jan 12, 1999).
5. 2001 International Technology Roadmap for Semiconductors, http://public.itrs.net.
6. C. Pierrat, M. Cote, K. Patterson, "New Alternating Phase-shifting Mask Conversion Methodology Using Phase-conflict Resolution, SPIE 2002 Proceedings, Vol. 4691.