SiGe/Si microtubes fabricated on a silicon-on-insulator substrate

Journal of Physics D: Applied Physics

Volumn 36, Issue 17, 2003, Pages

  Vorob'ev, A ^a   Vaccaro, P O ^a   Kubota, K ^a   Aida, T ^a   Tokuda, T ^b   Hayashi, T ^b   Sakano, Y ^b   Ohta, J ^b   Nunoshita, M ^b  

^a ADVANCED TELECOMMUNICATIONS RESEARCH INSTITUTE INTERNATIONAL   (Japan)

^b NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELASTIC MODULI; ETCHING; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON ON INSULATOR TECHNOLOGY; SINGLE CRYSTALS; STRAIN; STRESS RELAXATION; SUBSTRATES;

ELASTIC STRAIN; MICROSPIRAL; MICROTUBE; SILICA LAYER;

MICROELECTROMECHANICAL DEVICES;

EID: 0141607668     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/36/17/102     Document Type: Article

References (12)

1. Vaccaro P O, Kubota K and Aida T 2001 Appl. Phys. Lett. 78 2852
2. Prinz V Ya et al 2000 Physica E 6 828
3. Golod S V, Prinz V Ya, Mashanov V I and Gutakovsky A K 2001 Semicond. Sci. Technol. 16 181
4. Tsui Y C and Clyne T W 1997 Thin Solid Films 306 23
5. Vaccaro P O, Kubota K and Aida T 2001 28th Int. Symp. on Compound Semiconductors (Tokyo) p 5
6. Vorob'ev A, Vaccaro P O, Kubota K, Saravanan S and Aida T 2003 Japan. J. Appl. Phys. 42 4024
7. Takamiya M, Saraya T, Duyet T N, Yasuda Y and Hiramoto T 1999 Japan. J. Appl. Phys. 38 2483
8. Hirano Y, Maeda S, Fernandez W, Iwamatsu T, Yamaguchi Y, Maegawa S and Nishimura T 1999 Japan. J. Appl. Phys. 38 2487
9. Sumida H, Hirabayashi A and Shimabukuro H 1998 Japan. J. Appl. Phys. 37 1305
10. Graff J W and Shubert E F 2000 Sensors Actuators A 84 276
11. Takeshima N, Gabriel K J, Ozaki M, Takashashi J, Horiguchi H and Fujita H 1991 Transducers'91 (San Francisco, CA) p 63
12. Matthews J W and Blakeslee A E 1974 J. Cryst. Growth 27 118