Long-term reliability of the blocking capability and failure voltage of electrostatic discharge of the SOI high-voltage device and IC

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 SUPPL. B, 1998, Pages 1305-1307

  Sumida, Hitoshi ^a   Hirabayashi, Atsuo ^a   Shimabukuro, Hiroshi ^a  

^a FUJI ELECTRIC CO   (Japan)

Author keywords

Accelerated test; Blocking capability; ESD; IGBT; PMOS; Reliability; SOI

Indexed keywords

EID: 0000630942     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1305     Document Type: Article

References (8)

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