Morphology evolution during strained (In,Ga)As epitaxial growth on GaAs vicinal (100) surfaces

Applied Physics Letters

Volumn 83, Issue 9, 2003, Pages 1749-1751

  Wang, Z M ^a   Shultz, J L ^a   Salamo, G J ^a  

^a UNIVERSITY OF ARKANSAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE ROUGHNESS;

STEP BUNCHING;

SEMICONDUCTOR GROWTH;

EID: 0141605059     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1606891     Document Type: Article

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