Reduction of micro-scratch using slurry filter in oxide CMP (chemical mechanical polishing) for multi-level interconnections

Proceedings of the International Symposium on Electrical Insulating Materials

Volumn , Issue , 2001, Pages 91-94

  Kim, Chul Bok ^a   Kim, Sang Yong ^a   Seo, Yong Jin ^a  

^a Daebul University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MECHANICAL POLISHING; DEFECTS; DIELECTRIC MATERIALS; FILTRATION; INSTALLATION; INTEGRATED CIRCUITS; MULTILAYERS; OXIDES; SILICON WAFERS; SLURRIES; SURFACE TREATMENT;

FREE DEFECTS; GLOBAL PLANARIZATION; INTER METAL DIELECTRIC; MICRO SCRATCH; MULTI LEVEL INTERCONNECTIONS; SLURRY FILTER;

OPTICAL INTERCONNECTS;

EID: 0035720752     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. Planarizing interlevel dielectrics by chemical mechanical polishing
2. A study of removal rate control of oxide CMP (Chemical Mechanical Polishing) process
3. An optimization of tungsten plug chemical mechanical polishing (CMP) using different consumables
4. An optimized nitride residue phenomena of Shallow Trench Isolation (STI) process by Chemical Mechanical Polishing (CMP)
5. A study for the improvement of torn oxide defects in shallow trench isolation-chemical mechanical polishing (STI-CMP) process
6. Optimization of post-CMP cleaning process for elimination of CMP slurry induced metallic contaminations
7. Improved STI CMP Technology for micro-scratch issue
8. Filtration of CMP slurries in chemical delivery systems