Optical centers introduced in boron-doped synthetic diamond by near-threshold electron irradiation

Journal of Applied Physics

Volumn 94, Issue 5, 2003, Pages 3091-3100

  Charles, S J ^a   Steeds, J W ^a   Butler, J E ^b   Evans, D J F ^c  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

^b NAVAL RESEARCH LABORATORY   (United States)

^c DTC Research Centre   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ELECTRON IRRADIATION; HIGH TEMPERATURE EFFECTS; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON MICROSCOPY;

ULTRAVIOLET EXCITATION;

SYNTHETIC DIAMONDS;

EID: 0141522795     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1600523     Document Type: Article

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