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Volumn 34, Issue 3, 1995, Pages L281-L284
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Novel transparent and electroconductive amorphous semiconductor: Amorphous agsbo3 film
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Author keywords
AgSbO3; Amorphous semiconductor; Electroconductive oxide; RF sputtering; Thin film; Transparency
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Indexed keywords
ACTIVATION ENERGY;
AMORPHOUS FILMS;
ANNEALING;
ELECTRIC CONDUCTIVITY;
FLOW OF FLUIDS;
OXIDES;
PLASMAS;
SILVER COMPOUNDS;
SPUTTERING;
TEMPERATURE;
THIN FILMS;
TRANSPARENCY;
AMORPHOUS SEMICONDUCTOR;
CARRIER ELECTRONS;
ELECTROCONDUCTIVE OXIDE;
HALL MEASUREMENT;
HALL MOBILITY;
OPTICAL BAND GAP;
POSTANNEALING;
RADIO FREQUENCY SPUTTERING;
SEMICONDUCTOR MATERIALS;
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EID: 0029273078
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.34.L281 Document Type: Article |
Times cited : (32)
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References (14)
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