Polarizing assist features for high-NA optical lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4889, Issue 2, 2002, Pages 1313-1323

  Chen, Frederick T ^a  

^a INTEL CORPORATION   (United States)

Author keywords

Assist features; Phase shifting masks; Polarization; Resolution enhancement techniques; Subwavelength lithography

Indexed keywords

CHROMIUM; COMPUTER SIMULATION; IMAGING SYSTEMS; LIGHT POLARIZATION; MASKS; OPTICAL RESOLVING POWER; PHASE SHIFT;

PHOTOMASKS;

PHOTOLITHOGRAPHY;

EID: 0037965766     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.467249     Document Type: Conference Paper

References (8)

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2. Y. Unno, U.S. Patent 5,933,219 assigned to Canon (1999).
3. M. Lam and A. Neureuther, "Polarization Masks: Concept and Initial Assessment," Optical Microlithography XV, A. Yen (ed.), SPIE 4691, 2002.
4. M. Lam and A. Neureuther, "Polarization Contact: Concept and Initial Assessment," EIPBN, 2002.
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6. J. F. Chen, T. Laidig, K. E. Wampler, and R. Caldwell, "Optical proximity correction for intermediate-pitch features using sub-resolution scattering bars," J. Vac. Sci. Tech. B15, pp. 2426-2433, 1997.
7. J. M. Bennet, "Polarizers," in Handbook of Optics vol. 2, M. Bass (ed.), McGraw-Hill, New York, 1995, p. 3.32.
8. E. Noponen, A. Vasara, J. Turunen, J. Michael Miller, and M. Taghizadeh, "Synthetic diffractive optics in the resonance domain," J. Opt. Soc. Am. A9, pp. 1206-1213, 1992.