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Analysis of reflectometry and ellipsometry data from patterned structures
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Specular spectroscopic scatterometry
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Spectroscopic optical metrology for process characterization and control
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Fundamental solutions for real-time optical CD metrology
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Two-channel spectroscopic reflectometry for in situ monitoring of blanket and patterned structures during reactive ion etching
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Normal incidence spectroscopic ellipsometry for critical dimension monitoring
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"Spectral scatterometry for 2D trench metrology of low-k dual-damascene interconnect," V. A. Ukraintsev, M. Kulkarni, C. Baum, K. Kirmse, Texas Instruments Inc.; M. Guevremont, S. Lakkapragada, K. N. Bhatia, P. P. Herrera, U. K. Whitney, KLA-Tencor Corp., SPIE Conference on Metrology, Inspection, and Process Control for Microlithography XVI, Santa Clara, CA, March 4-7, 2002.
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0141755035
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Real time in situ monitoring of deep sub-μm topography evolution during reaction ion etching
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"Real Time In Situ Monitoring of Deep Sub-μm Topography Evolution during Reaction Ion Etching," Hsu-Ting Huang, Ji-Woong Lee, Brooke S. Stutzman, Pete Klimecky, Craig Garvin, Pramod P. Khargonekar, and Fred L. Terry, Jr., SEMATECH AEC/APC Symposium, Lake Tahoe, NV., September 25-28, 2000.
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SEMATECH AEC/APC Symposium, Lake Tahoe, NV., September 25-28, 2000
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0141755034
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In situ monitoring of deep sub-□m topography evolution and endpoint detection during reactive ion etching
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SEMATECH AEC/APC Symposium XIII, October 6-11, 2001, Banff, Alberta, Canada
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Huang, H.-T.1
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Klimecky, P.3
Khargonekar, P.P.4
Terry F.L., Jr.5
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0029306568
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Stable implementation of the rigorous coupled-wave analysis for surface-relief gratings: Enhanced transmittance matrix approach
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