Spectral scatterometry for 2D trench metrology of low-K dual-damascene interconnect

Proceedings of SPIE-The International Society for Optical Engineering

Volumn 4689 I, Issue , 2002, Pages 189-195

  Ukraintsev, Vladimir A ^a   Kulkarni, Mak ^a   Baum, Christopher ^a   Kirmse, Karen ^a   Guevremont, Marco ^b   Lakkapragada, Suresh ^b   Bhatia, Kamal ^b   Herrera, Pedro ^b   Whitney, Umar ^b  

^a TEXAS INSTRUMENTS   (United States)

^b KLA TENCOR CORPORATION   (United States)

Author keywords

Dielectric; Interconnect; Metrology; Spectral scatterometry; Trench; Two dimensional

Indexed keywords

ATOMIC FORCE MICROSCOPY; DIELECTRIC MATERIALS; ION BEAMS; PERMITTIVITY; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

DUAL-DAMASCENCE INTERCONNECTS;

INTEGRATED CIRCUITS;

EID: 0036029731     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.473457     Document Type: Article

References (3)

1. K.A. Monnig, "The transition to Cu, damascene and low-K dielectrics for integrated circuit interconnects, impacts on the industry," Proc. Of the Characterization and Metrology for ULSI Technology 2000, pp. 423-430, 2001.
2. International Technology Roadmap for Semiconductors, sponsored by SIA, 1999 Edition, p.301.
3. H.M. Marchman and J.E. Griffith, "Scanned Probe Microscope Dimensional Metrology," Handbook of Silicon Semiconductor Metrology, pp. 352-356, edited by A.C. Diebold, Marcel Dekker, Inc., New York (2001).