-
1
-
-
0141509676
-
Polymer photochemistry at three advanced optical wavelengths
-
T.H. Fedynyshyn, R.R.Kunz, R.F. Sinta, R.B. Goodman, and S.P. Doran, "Polymer Photochemistry at Three Advanced Optical Wavelengths", Forefront of Lithographic Materials Research: Proc. Of International Conference on Photopolymers 12, 3 (2000).
-
(2000)
Forefront of Lithographic Materials Research: Proc. of International Conference on Photopolymers
, vol.12
, Issue.3
-
-
Fedynyshyn, T.H.1
Kunz, R.R.2
Sinta, R.F.3
Goodman, R.B.4
Doran, S.P.5
-
2
-
-
0034317717
-
Polymer photochemistry at advanced optical wavelengths
-
T.H. Fedynyshyn, R.R.Kunz, R.F. Sinta, R.B. Goodman, and S.P. Doran, "Polymer Photochemistry at Advanced Optical Wavelengths", J. Vac. Sci. Technol. B 18, 3332 (2000).
-
(2000)
J. Vac. Sci. Technol. B
, vol.18
, pp. 3332
-
-
Fedynyshyn, T.H.1
Kunz, R.R.2
Sinta, R.F.3
Goodman, R.B.4
Doran, S.P.5
-
3
-
-
0016526028
-
Characterization of positive photoresist
-
F. H. Dill, W. P. Hornberger, P. S. Hauge, and J. M. Shaw, "Characterization of Positive Photoresist," IEEE Trans. Electron Devices, ED-22, 445 (1975).
-
(1975)
IEEE Trans. Electron Devices
, vol.ED-22
, pp. 445
-
-
Dill, F.H.1
Hornberger, W.P.2
Hauge, P.S.3
Shaw, J.M.4
-
4
-
-
0029727394
-
Resist metrology for lithography simulation, part 1: Exposure parameter measurements
-
C. A. Mack, T. Matsuzawa, A. Sekiguchi, and Y. Minami, "Resist Metrology for Lithography Simulation, Part 1: Exposure Parameter Measurements," Proc. SPIE 2725, 34 (1996).
-
(1996)
Proc. SPIE
, vol.2725
, pp. 34
-
-
Mack, C.A.1
Matsuzawa, T.2
Sekiguchi, A.3
Minami, Y.4
-
5
-
-
0032653145
-
A FT-IR method to determine dill's C parameter for DNQ/novolac resists with e-beam and i-line exposure
-
T.H. Fedynyshyn, S.P. Doran, and C.A. Mack, "A FT-IR Method to Determine Dill's C Parameter for DNQ/Novolac Resists with e-beam and i-line Exposure", Proc. SPIE 3678, 1263 (1999).
-
(1999)
Proc. SPIE
, vol.3678
, pp. 1263
-
-
Fedynyshyn, T.H.1
Doran, S.P.2
Mack, C.A.3
-
6
-
-
0001403531
-
Absorption and exposure in positive photoresist
-
C.A. Mack, "Absorption and Exposure in Positive Photoresist", Applied Optics 27, 4913 (1988).
-
(1988)
Applied Optics
, vol.27
, pp. 4913
-
-
Mack, C.A.1
-
7
-
-
0141509677
-
Fluorescence spectroscopy and photochemistry of poly(4-oxystyrenes) with triphenylsulfonium salts
-
(Washington, D.C.)
-
N.P. Hacker and K.M. Welsh, "Fluorescence Spectroscopy and Photochemistry of Poly(4-oxystyrenes) with Triphenylsulfonium Salts", Structure-Property Relations in Polymers: Spectroscopy and Performance, American Chemical Society, (Washington, D.C.), 236, 557 (1993).
-
(1993)
Structure-Property Relations in Polymers: Spectroscopy and Performance, American Chemical Society
-
-
Hacker, N.P.1
Welsh, K.M.2
-
8
-
-
0141620904
-
The photosensitized dissociation of 4-nitrobenzylsulfonate esters by phenolic matrices
-
G.G. Barclay, D. Lindquist, P.R.L. Malenfant, M.M. Rajaratnam, and R.F. Sinta, "The Photosensitized Dissociation of 4-Nitrobenzylsulfonate Esters by Phenolic Matrices", Polymeric Materials: Science & Engineering 70, 34 (1994).
-
(1994)
Polymeric Materials: Science & Engineering
, vol.70
, pp. 34
-
-
Barclay, G.G.1
Lindquist, D.2
Malenfant, P.R.L.3
Rajaratnam, M.M.4
Sinta, R.F.5
-
9
-
-
0141732909
-
Fluorocarbon polymer-based photoresists for 157-nm lithography
-
T.H. Fedynyshyn, W.A. Mowers, R.R. Kunz, R.F. Sinta, M. Sworin, A. Cabral, and J. Curtin, "Fluorocarbon Polymer-based Photoresists for 157-nm Lithography", Polymeric Materials: Science & Engineering 87, 398 (2002).
-
(2002)
Polymeric Materials: Science & Engineering
, vol.87
, pp. 398
-
-
Fedynyshyn, T.H.1
Mowers, W.A.2
Kunz, R.R.3
Sinta, R.F.4
Sworin, M.5
Cabral, A.6
Curtin, J.7
-
10
-
-
0033707165
-
Determination of optical properties of thin films and surfaces in 157-nm lithography
-
V. Liberman, T. M. Bloomstein and M. Rothschild, "Determination of Optical Properties of Thin Films and Surfaces in 157-nm Lithography", Proc. SPIE 3998, 480 (2000).
-
(2000)
Proc. SPIE
, vol.3998
, pp. 480
-
-
Liberman, V.1
Bloomstein, T.M.2
Rothschild, M.3
|