The impact of surfactant in developer and rinse solution on 193 nm lithography performance

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5039 II, Issue , 2003, Pages 1409-1415

  Zhang, Peng ^a   Jaramillo, Manuel ^a   King, Danielle ^a   Ross, Brenda ^a   Witko, David ^b   Paxton, Ted ^b   Davis, Todd ^b  

^a AIR PRODUCTS AND CHEMICALS INC   (United States)

^b ASML US Inc   (United States)

Author keywords

CD; Pattern collapse; Photoresist developer; Surfactant; Surfactant formulated rinse solution

Indexed keywords

ASPECT RATIO; ETCHING; INTERFACES (MATERIALS); PERFORMANCE; PLASTIC FILMS; SOLUTIONS; SURFACE ACTIVE AGENTS; SURFACE TENSION; THICK FILMS; THICKNESS MEASUREMENT; WETTING;

CRITICAL DIMENSION UNIFORMITY; PATTERN COLLAPSE; PHOTORESIST DEVELOPER; SURFACTANT-FORMULATED RINSE SOLUTION;

PHOTORESISTS;

EID: 0141499141     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.485170     Document Type: Conference Paper

References (12)

1. The International Technology Roadmap for Semiconductors, Lithography Section (San Jose: Semiconductor Industry Association, 2001).
2. T. Tanaka, M. Moridami, N. Atoda, Jpn. J. Appl. Phys., 32, 6059-6064, (1993).
3. a) T. Shibata, T. Ishii, H. Nozawa, T. Tamamura, Jpn. J. Appl. Phys. 36, 7642 (1997).
4. b) T. Tanaka, M. Morigami, H. Oizumi, T. Ogawa, Jpn. J. Appl. Phys. 33, 1803 (1994)
5. T. Tanaka, M. Morigami, H. Oizumi, T. Ogawa, Jpn. J. Appyl. Phys. 32, 5813 (1993)
6. a) H. Namatsu, K. Yamazaki, K. Kurihara, Microelectronic Engineering 46, 129 (1999).
7. b) W. D. Domke, V. L. Graffenberg, S. Patel, G. K. Rich, H. B. Cao, P. F. Nealey, Proc. SPIE 3999, 313-321, 2000.
8. A. W. Adamson, A. P. Gast Physical Chemistry of Surfaces, 495-497, 6th ed., Wiley, New York, 1997.
9. F. E. Bartell, L. S. Bartell, J. Am. Chem. Soc. 56, 2205, 1934.
10. M. J. Rosen, Surfactants and Interfacial Phenomena, 244-245, 2nd ed., Wiley, New York, 1988.
11. P. Zhang, D. King, E. J. Karwacki, MICRO, June, 51, 2002.
12. H. Cao, P. Nealey, W. D. Dmoke, J. Vac. Sci. Technol. B 18(6), 3303, 2000.