-
1
-
-
0036414999
-
Challenges in high NA, polarization and photoresists
-
Smith B. W. and Cashmore J. S., "Challenges in high NA, polarization and photoresists", Proc. SPIE 4691 (2002) p. 11.
-
(2002)
Proc. SPIE
, vol.4691
, pp. 11
-
-
Smith, B.W.1
Cashmore, J.S.2
-
2
-
-
0036414316
-
New methods to calibrate simulation parameters for chemically amplified resists
-
Tollkeuhn B. et al., "New methods to calibrate simulation parameters for chemically amplified resists", Proc. SPIE 4691 (2002) p 1168.
-
(2002)
Proc. SPIE
, vol.4691
, pp. 1168
-
-
Tollkeuhn, B.1
-
3
-
-
0034846063
-
Comparison of simulation approaches for chemically amplified resists
-
Erdman A. et al., "Comparison of simulation approaches for chemically amplified resists", Proc. SPIE 4404 (2001) p.99.
-
(2001)
Proc. SPIE
, vol.4404
, pp. 99
-
-
Erdman, A.1
-
4
-
-
0029727248
-
Calibration of chemically amplified resist models
-
Byers J., Petersen J. and Sturtevant J., "Calibration of Chemically Amplified Resist Models", Proc. SPIE 2724 (1996) p.156.
-
(1996)
Proc. SPIE
, vol.2724
, pp. 156
-
-
Byers, J.1
Petersen, J.2
Sturtevant, J.3
-
5
-
-
0032648453
-
Matching simulation and experiment for chemically amplified resists
-
Mack C.A., Ercken M. and Moelants M., "Matching simulation and Experiment for Chemically Amplified Resists", Proc. SPIE 3679 (1999) p.183.
-
(1999)
Proc. SPIE
, vol.3679
, pp. 183
-
-
Mack, C.A.1
Ercken, M.2
Moelants, M.3
-
6
-
-
0034839897
-
Automatic calibration of lithography simulation parameters
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Jug S., Huang R., Byers J. and Mack C. A., "Automatic Calibration of Lithography Simulation Parameters", Proc. SPIE 4404 (2001).
-
(2001)
Proc. SPIE
, vol.4404
-
-
Jug, S.1
Huang, R.2
Byers, J.3
Mack, C.A.4
-
8
-
-
77953246851
-
Enhanced lumped parameter model for photolithography
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Mack C.A., "Enhanced Lumped Parameter Model for Photolithography", Proc. SPIE 2197 (1994) p.501.
-
(1994)
Proc. SPIE
, vol.2197
, pp. 501
-
-
Mack, C.A.1
-
9
-
-
0021937612
-
PROLITH: A comprehensive lithography model
-
Mack C.A., "PROLITH: a comprehensive lithography model", Proc. SPIE 538 (1985) p. 207.
-
(1985)
Proc. SPIE
, vol.538
, pp. 207
-
-
Mack, C.A.1
-
10
-
-
0026841803
-
New kinetic model for resist dissolution
-
Mack C.A., "New Kinetic Model for Resist Dissolution", J. Electrochem. Soc. Vol. 139 No. 4 (1992) L.35.
-
(1992)
J. Electrochem. Soc.
, vol.139
, Issue.4
-
-
Mack, C.A.1
-
11
-
-
0031683744
-
Analyzing the dissolution characteristics of deep UV chemically amplified photoresist
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Arthur G., Mack C. A., Eilbeck N, and Martin B., "Analyzing the Dissolution Characteristics of Deep UV Chemically Amplified Photoresist", Microelectronic Engineering 41/42, (1998) p.311.
-
(1998)
Microelectronic Engineering
, vol.41-42
, pp. 311
-
-
Arthur, G.1
Mack, C.A.2
Eilbeck, N.3
Martin, B.4
-
12
-
-
0029255710
-
Modeling and simulation of chemically amplified DUV resist using the effective acid concept
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Weiss, M., Binder H. and Schwalm R., "Modeling and Simulation of Chemically Amplified DUV Resist using the Effective Acid Concept", Microelectronic Engineering 27, (1995) p. 405.
-
(1995)
Microelectronic Engineering
, vol.27
, pp. 405
-
-
Weiss, M.1
Binder, H.2
Schwalm, R.3
-
13
-
-
0030314582
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Lithography model tuning: Matching simulation to experiment
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Thornton S. H. and Mack C.A., "Lithography Model Tuning: Matching Simulation to Experiment", Proc. SPIE 2726 (1996) p.223.
-
(1996)
Proc. SPIE
, vol.2726
, pp. 223
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Thornton, S.H.1
Mack, C.A.2
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