Positron annihilation study of defects and Si nanoprecipitation in sputter-deposited silicon oxide films

Chemical Physics Letters

Volumn 379, Issue 3-4, 2003, Pages 359-363

  Yu, R S ^a   Ito, K ^a   Hirata, K ^a   Sato, K ^a   Zheng, W ^a   Kobayashi, Y ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

OXYGEN; SILICON DERIVATIVE; SILICON OXIDE; UNCLASSIFIED DRUG;

ARTICLE; CHEMICAL ANALYSIS; CRYSTAL; DOPPLER FLOWMETRY; ELECTRON TRANSPORT; MAGNETISM; NANOPARTICLE; POSITRON; POSITRONIUM; PRECIPITATION; SPECTROSCOPY; TEMPERATURE; VACUUM;

EID: 0141495051     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2003.08.056     Document Type: Article

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