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Volumn 13, Issue 2 I, 2003, Pages 107-110

High quality Nb-based tunnel junctions for high frequency and digital applications

Author keywords

Aluminum nitride; Josephson tunnel junctions; SIS mixers; Superconductivity

Indexed keywords

CHEMICAL MECHANICAL POLISHING; CURRENT DENSITY; ELECTRON BEAM LITHOGRAPHY; NIOBIUM; PARAMETER ESTIMATION; SIGNAL RECEIVERS;

EID: 0043281591     PISSN: 10518223     EISSN: None     Source Type: Journal    
DOI: 10.1109/TASC.2003.813657     Document Type: Conference Paper
Times cited : (71)

References (12)
  • 3
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    • 0035268365 scopus 로고    scopus 로고
    • SINIS process development for integrated circuits with characteristic voltages exceeding 250 μV
    • D. Balashov, M. Khabipov, F.-I. Buchholtz, and J. Niemeyer, "SINIS process development for integrated circuits with characteristic voltages exceeding 250 μV," IEEE Trans. on Appl. Supercond., vol. 11, no. 1, pp. 1070-1073, 2001.
    • (2001) IEEE Trans. on Appl. Supercond. , vol.11 , Issue.1 , pp. 1070-1073
    • Balashov, D.1    Khabipov, M.2    Buchholtz, F.-I.3    Niemeyer, J.4
  • 11
    • 0031164890 scopus 로고    scopus 로고
    • y/Nb structure for integrated circuits application
    • y/Nb structure for integrated circuits application," Appl. Phys. Lett., vol. 70, pp. 3603-3605, 1997.
    • (1997) Appl. Phys. Lett. , vol.70 , pp. 3603-3605
    • Maezawa, M.1    Shoji, A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.