SINIS process development for integrated circuits with characteristic voltages exceeding 250 μV

IEEE Transactions on Applied Superconductivity

Volumn 11, Issue 1 I, 2001, Pages 1070-1073

  Balashov, Dimitry ^a,b   Khabipov, Marat ^a   Buchholz, Friedrich Immanuel ^a   Niemeyer, Jürgen ^a  

^a PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

^b INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS   (Russian Federation)

Author keywords

Josephson effect; Rapid single flux quantum pulse logic; Superconducting digital electronics

Indexed keywords

CRITICAL CURRENT DENSITY (SUPERCONDUCTIVITY); DIGITAL DEVICES; ELECTRIC LINES; FLIP FLOP CIRCUITS; INTEGRATED CIRCUIT MANUFACTURE; LOGIC CIRCUITS; MULTILAYERS; THERMAL EFFECTS; VOLTAGE MEASUREMENT;

BIAS CURRENTS; HYSTERESIS-FREE BEHAVIOUR; INTRA-WAFER PARAMETER; JOSEPHSON TRANSMISSION LINES; MULTILAYER TECHNOLOGY;

JOSEPHSON JUNCTION DEVICES;

EID: 0035268365     PISSN: 10518223     EISSN: None     Source Type: Journal    
DOI: 10.1109/77.919532     Document Type: Conference Paper

References (13)

1. Influence of boundary transparency on the critical current in "dirty" SS'S structures
2. Fabrication and properties of supercoducting double-barrier structure
3. Superconducting proximity effect through high-quality high-conductance tunnel barriers
4. y/Nb structure for integrated circuit application
5. y/Nb junctions based on the proximity effect
6. x/Al/Nb-Josephson junctions for programmable voltage standards
7. y/Nb) process development for integrated circuit applications
8. 3-Al/Nb process development for the fabrication of fast-switching circuits in RSFQ logic
9. x/Nb technology
10. Stationarity properties of SINIS double-barrier Josephson junction
11. Current noise effect on the induced steps in current fed Josephson junction
12. Automated calculation of mutual inductance matrices of multilayer superconductor integrated circuits
13. High-frequency performance of RSFQ circuits realized in SINIS technology