GaInAsSb and InAsSbP photodetectors for mid-infrared wavelengths

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3379, Issue , 1998, Pages 354-360

  Shellenbarger, Zane A ^a   Mauk, Michael G ^a   Cox, Jeffrey A ^a   South, Joseph ^a   Lesko, Joseph D ^a   Sims, Paul E ^a   DiNetta, Louis C ^a  

^a GE ENERGY   (United States)

Author keywords

Avalanche photodiode; Detector; GaInAsSb; InAsSbP; Mid infrared; Room temperature

Indexed keywords

AVALANCHE PHOTODIODES; AVALANCHES (SNOWSLIDES); EPITAXIAL GROWTH; FOCUSING; GALLIUM ALLOYS; HETEROJUNCTION BIPOLAR TRANSISTORS; INDIUM ARSENIDE; INFRARED DETECTORS; INFRARED DEVICES; MICROMETERS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PHOTODIODES; SNOW; THICKNESS MEASUREMENT;

AVALANCHE PHOTODIODE; DETECTOR; GAINASSB; INASSBP; MID-INFRARED; ROOM-TEMPERATURE;

DETECTORS;

EID: 0043259930     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.317602     Document Type: Conference Paper

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