Studies of the Ga1-xInxAs1-ySby quaternary alloy system I. liquid-phase epitaxial growth and assessment

Journal of Electronic Materials

Volumn 15, Issue 1, 1986, Pages 41-49

  Astles, M ^a   Hill, H ^a   Williams, A J ^a   Wright, P J ^a   Young, M L ^a  

^a Thorn EMI Ctrl Res Laboratories   (United Kingdom)

Author keywords

assessment; GalnAsSb alloys; lattice matching; Liquid phase epitaxy

Indexed keywords

BAND STRUCTURE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICES, SCHOTTKY BARRIER; SUBSTRATES;

LATTICE MATCHING III-V ALLOYS; LIQUID PHASE EPITAXY; PHASE DIAGRAM CALCULATIONS; QUATERNARY ALLOYS;

SEMICONDUCTOR MATERIALS;

EID: 0022464968     PISSN: 03615235     EISSN: 1543186X     Source Type: Journal    
DOI: 10.1007/BF02649949     Document Type: Article

References (21)

1. Luminescence and stimulated emission from Gaxln1–xAsySb1–y
2. A study of phase equilibria and heterojunctions in Ga–In–As–Sb quaternary system
3. Liquid-Phase Epitaxial Growth of InGaAsSb/GaSb and InGaAsSb/AlGaAsSb DH Wafers
4. Instability of “slow” solid-liquid interface relaxation before the hetero-LPE of III-V compounds