Progress on GaInAsSb and InAsSbP photodetectors for mid-infrared wavelengths

Materials Research Society Symposium - Proceedings

Volumn 484, Issue , 1997, Pages 135-140

  Shellenbarger, Z A ^a   Mauk, M G ^a   Sims, P E ^a   Cox, J A ^a   Lesko, J D ^a   Bower, J R ^a   South, J D ^a   Dinetta, L C ^a  

^a GE ENERGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LIQUID PHASE EPITAXY; PHOTODIODES; SEMICONDUCTING ANTIMONY COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

AVALANCHE MULTIPLICATION GAIN; AVALANCHE PHOTODIODE; MID-INFRARED WAVELENGTH; NOISE LIMITED DETECTIVITY;

PHOTODETECTORS;

EID: 0031369420     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-484-135     Document Type: Conference Paper

References (12)