Photoelectrochemical etching of InxGa1-xN

Applied Physics Letters

Volumn 76, Issue 26, 2000, Pages 3917-3919

  Hwang, J M ^a   Hsieh, J T ^a   Ko, C Y ^a   Hwang, H L ^a   Hung, W H ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0043230203     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126820     Document Type: Article

References (5)

1. H. Marchand, X. H. Wu, J. P. Ibbetson, P. T. Fini, P. Kozodoy, S. Keller, J. S. Speck, S. P. DenBaars, and U. K. Mishra, Appl. Phys. Lett. 73, 747 (1998).
2. C. B. Vartuli, S. J. Pearton, C. R. Abernathy, J. D. MacKenzie, and F. Ren, Solid-State Electron. 41, 1947 (1997).
3. C. Youtsey and I. Adesida, Appl. Phys. Lett. 71, 2151 (1997).
4. H. Cho, S. M. Donovan, C. R. Abernathy, S. J. Pearton, F. Ren, and J. Han, MRS Internet J. Nitride Semicond. Res. 4S1, G640 (1999).
5. Q. X. Guo, O. Kato, and A. Yoshida, J. Electrochem. Soc. 139, 2008 (1992).