Defect structure of CdZnTe

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 458, Issue 1-2, 2001, Pages 90-95

  Turjanska, L ^a   Hoschl P ^a   Belas, E ^a   Grill, R ^a   Franc, J ^a   Moravec, P ^a  

^a CHARLES UNIVERSITY   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY OF SOLIDS; GAMMA RAYS; HALL EFFECT; MATHEMATICAL MODELS; PRECIPITATION (CHEMICAL); QUENCHING; SEMICONDUCTING CADMIUM TELLURIDE; SINGLE CRYSTALS; STOICHIOMETRY;

CADMIUM ZINC TELLURIDE; VERTICAL GRADIENT FREEZE METHOD;

PARTICLE DETECTORS;

EID: 0343397657     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(00)00925-6     Document Type: Article

References (8)

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3. Smith F.T.J. Met. Trans. 1:1970;617.
4. D.L. Rode, in: R.K. Willardson, A.C. Beer (Eds.), Semiconductors and Semimetals, Vol. 10, Academic Press, New York, 1975, p. 1.
5. Butcher P.N., Fawcett W. Proc. Phys. Soc. (London). 86:1965;1205.
6. Berding M.A., van Schilfgaarde M., Sher A. Phys. Rev. B 50:1994;1519.
7. Nobel D. Philips Res. Rep. 14:1959;361,430.
8. O. Madelung (Ed.), Semiconductors - Basic Data, 2nd revised Edition, Springer, Berlin, 1996, p. 267.