A 6 GHz, 50 watt low distortion push-pull GaAs power FET optimized for 12V class A-B operation

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2001, Pages 1055-1058

  Yamamoto, T ^a   Sano, S ^a   Naito, K ^a   Igarashi, T ^a   Fukaya, J ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; OPTIMIZATION; SATELLITE COMMUNICATION SYSTEMS; SEMICONDUCTING GALLIUM ARSENIDE;

INTERMODULATION DISTORTION; POWER ADDED EFFICIENCY; TERRESTRIAL COMMUNICATION;

FIELD EFFECT TRANSISTORS;

EID: 0035694803     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. L-band 100-WATTs push-pull GaAs FET
2. A 150W E-mode GaAs power FET with 35% PAE for W-CDMA base station
3. A 240W push-pullGaAs power FET for W-CDMA base station