Modeling and circuit simulation of GaN-based light emitting diodes for optimum efficiency through uniform current spreading

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4776, Issue , 2002, Pages 187-194

  Ebong, A ^a   Arthur, S ^a   Downey, E ^a   Stokes, E B ^a   Cao, X A ^a   LeBoeuf, S ^a   Sandvik, P M ^a   Walker, D ^a  

^a GE GLOBAL RESEARCH   (United States)

Author keywords

Current spreading; Gallium nitride; Light emitting diode modeling; SPICE circuit and device simulation

Indexed keywords

COMPUTER SIMULATION; ELECTRIC RESISTANCE; GALLIUM NITRIDE; LEAKAGE CURRENTS; MATHEMATICAL MODELS; SUBSTRATES;

LATERAL RESISTANCE; OPTIMAL LIGHT EXTRACTION; OPTIMUM EFFICIENCY;

LIGHT EMITTING DIODES;

EID: 0036983346     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.452586     Document Type: Conference Paper

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