How annealing conditions influence the fluctuation of step edges of step bunching on vicinal GaAs(100) formed by annealing in AsH3and H 2 ambient

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 15, Issue 3, 1997, Pages 1269-1274

  Hata, K ^a,b   Shigekawa, H ^a   Ueda, T ^c   Akiyama, M ^c   Okano, T ^b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^c Oki Semiconductor Technology Laboratory Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING CONDITION; ELECTRON COUNTING; GAAS(001); GAAS(1 0 0); STEP BUNCHING; STEP EDGE;

GALLIUM ALLOYS; GALLIUM ARSENIDE; PARTIAL PRESSURE; PHASE TRANSITIONS; SEMICONDUCTING GALLIUM;

ANNEALING;

EID: 0009746179     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580605     Document Type: Article

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