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Volumn 15, Issue 3, 1997, Pages 1269-1274
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How annealing conditions influence the fluctuation of step edges of step bunching on vicinal GaAs(100) formed by annealing in AsH3and H 2 ambient
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING CONDITION;
ELECTRON COUNTING;
GAAS(001);
GAAS(1 0 0);
STEP BUNCHING;
STEP EDGE;
GALLIUM ALLOYS;
GALLIUM ARSENIDE;
PARTIAL PRESSURE;
PHASE TRANSITIONS;
SEMICONDUCTING GALLIUM;
ANNEALING;
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EID: 0009746179
PISSN: 07342101
EISSN: None
Source Type: Journal
DOI: 10.1116/1.580605 Document Type: Article |
Times cited : (4)
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References (12)
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