Development of IEEE802.11a WLAN LNA in silicon-based processes

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2003, Pages 1573-1576

  Banerjee, Bhaskar ^a   Matinpour, Babak ^a   Lee, Chang Ho ^a   Venkataraman, Sunitha ^a   Chakraborty, Sudipto ^a   Laskar, Joy ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; LOCAL AREA NETWORKS; SEMICONDUCTING SILICON; SPURIOUS SIGNAL NOISE; SWITCHING;

LOW-NOISE AMPLIFIERS;

WIRELESS TELECOMMUNICATION SYSTEMS;

EID: 0043065282     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. J. T. Colvin, S. S. Bhatia, K. K. O, "Effects of substrate resistances on LNA performance and a bondpad structure for reducing the effects in a silicon bipolar technology", IEEE Journal of Solid State Circuits, vol. 34, no. 9, September 1999.
2. R. Gharpurey, R. G. Meyer, "Modeling and Analysis of substrate coupling in integrated circuits", IEEE Journal of Solid State Circuits, vol. 31, no. 3, March 1996.
3. T. H. Lee, The Design of CMOS Radio-Frequency Integrated Circuits, Cambridge University Press, 1998.
4. D. M. Pozar, Microwave Engineering, John Wiley & Sons, 1998.
5. J. Sadowy, I. Telliez. J. Graffeuil, E. Tournier, L. Escotte, R. Plana, "Low Noise, high linearity, wide bandwidth Amplifier using a 0.35μm SiGe BiCMOS for WLAN applications", RFIC Symposium 2002, pp. 217-220.
6. J. Sadowy, J. Graffeuil, E. Tournier, L. Escotte, R. Plana, "Advanced design of high linearity, low noise amplifier for WLAN using a SiGe BiCMOS technology", Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2001, Digest of Papers, pp. 6-11.