Low noise, high linearity, wide bandwidth amplifier using a 0.35μm SiGe BiCMOS for WLAN applications

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2002, Pages 217-220

  Sadowy, J ^a   Telliez, I ^a   Graffeuil, J ^a   Tournier, E ^a   Escotte, L ^a   Plana, R ^a  

^a LAAS CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; FREQUENCIES; LOCAL AREA NETWORKS; OSCILLATIONS; SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE; WIRELESS TELECOMMUNICATION SYSTEMS;

POWER CONSUMPTION;

AMPLIFIERS (ELECTRONIC);

EID: 0036309657     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. Noise figure of radio receivers
2. RFIC's for mobile communication systems using SiGe bipolar transistors
3. Application of SiGe HBT in 5.8 and 10 GHz low noise amplifier
4. Ultra low power low noise amplifiers for wireless communications
5. A comparative study on the various monolithic low noise amplifiers for wireless communications
6. A wide dynamic range switched-LNA in SiGe BiCMOS
7. Dual bias feed SiGe HBT low noise linear amplifier
8. A 2.5 GHz low noise high linearity LNA/mixer IC in SiGe BiCMOS technology
9. Application of SiGe heterojuncfion bipolar transistors in 5.8 and 10 GHz low-noise amplifiers