Advanced design of high linearity, low noise amplifier for WLAN using a SiGe BiCMOS technology

2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001

Volumn , Issue , 2001, Pages 6-11

  Sadowy, J ^a,b   Graffeuil, J ^a   Tournier, E ^a   Escotte, L ^a   Plana, R ^a  

^a CNRS   (France)

^b STMICROELECTRONICS   (France)

Author keywords

high Q inductor; LNA; Non linear behavior; SiGe HBT

Indexed keywords

AMPLIFIERS (ELECTRONIC); BANDWIDTH; BICMOS TECHNOLOGY; DESIGN; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUIT DESIGN; INTEGRATED CIRCUITS; MONOLITHIC INTEGRATED CIRCUITS; NOISE FIGURE; SEMICONDUCTING SILICON; SILICON ALLOYS;

ELECTROMAGNETIC SIMULATION; HIGH-Q INDUCTORS; INPUT-REFERRED THIRD-ORDER INTERCEPT POINTS; INTEGRATED LOW NOISE AMPLIFIERS; LNA; MAXIMUM OSCILLATION FREQUENCY; NONLINEAR BEHAVIOR; SIGE HBTS;

LOW NOISE AMPLIFIERS;

EID: 4444317470     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMIC.2001.942332     Document Type: Conference Paper

References (8)

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