Passivation of HgCdTe p-n diode junction by compositionally graded HgCdTe formed by annealing in a Cd/Hg atmosphere

Journal of Electronic Materials

Volumn 31, Issue 7, 2002, Pages 683-687

  An, S Y ^a   Kim, J S ^a   Seo, D W ^a   Suh, S H ^a  

^a Korea Institute of Science and Technology   (South Korea)

Author keywords

Cd Hg; HgCdTe; Passivation

Indexed keywords

ANNEALING; CAPACITANCE; DEPOSITION; DIFFUSION; ELECTRIC POTENTIAL; INFRARED RADIATION; MERCURY COMPOUNDS; PASSIVATION;

DIODE JUNCTIONS; PASSIVANTS;

SEMICONDUCTOR DIODES;

EID: 0036638177     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0219-z     Document Type: Conference Paper

References (12)