Fast growth and doping characteristics of α-SiC in horizontal cold-wall chemical vapor deposition

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 183-186

  Nakamura, Shun Ichi ^a   Kimoto, Tsunenobu ^a   Matsunami, Hiroyuki ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Cold wall CVD; Isothermal capacitance transient spectroscopy ICTS; Photoluminescence

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); DOPING (ADDITIVES); PHOTOLUMINESCENCE; POLYMERIZATION; SILICON; SURFACE MORPHOLOGY; GROWTH RATE; MORPHOLOGY; SILICON CARBIDE;

COLD-WALL CVD; ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY ICTS; COLD WALL; COLD WALL CHEMICAL VAPOR DEPOSITION; FAST GROWTHS; GROWTH CONDITIONS; HIGH SPEED; HOMO EPITAXIES; ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPIES; REACTION SYSTEM;

GROWTH RATE; CHEMICAL VAPOR DEPOSITION;

EID: 0042901397     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.183     Document Type: Article

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