High-purity and thick 4H-and 6H-SiC(0001) epitaxial growth by cold-wall chemical vapor deposition and high-voltage pin diodes

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 4 A, 2001, Pages

  Tamura, S ^a   Fujihira, K ^a   Kimoto, T ^a   Matsunami, H ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Chemical vapor deposition; Photoluminescence; Pin diode; Power device; Silicon carbide

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC BREAKDOWN; PHOTOLUMINESCENCE; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SILICON CARBIDE;

HIGH-VOLTAGE PIN DIODES;

EPITAXIAL GROWTH;

EID: 0035301947     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l319     Document Type: Article

References (17)

1. Proc. 12th Conf. Solid State Devices