Hybrid integration of III-V optoelectronic devices on Si platform using BCB

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4997, Issue , 2003, Pages 198-205

  Katsnelson, Alex ^a   Tokranov, Vadim ^a   Yakimov, Michael ^a   Lamberti, Matthew ^a   Oktyabrsky, Serge ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

GaAs on Si; Hybride integration; Optoelectronic devices; Polymer bonding

Indexed keywords

HEAT LOSSES; METALLIZING; PHOTOEMISSION; SILICON WAFERS; THERMAL STRESS;

POLYMER BONDING;

OPTOELECTRONIC DEVICES;

EID: 0042861783     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.479453     Document Type: Conference Paper

References (12)

1. S. Oktyabrsky, J. Castracane, and A. Kaloyeros, "Emerging Technologies for Chip-Level Optical Interconnects", Proc. SPIE, 4652, 213 (2002).
2. V. Joshkin, A. Orlikovsky, S. Oktyabrsky, K. Dovidenko, A. Kvit, I. Muhamedzanov and E. Pashaev, "Biaxial compression in GaAs thin films grown on Si", J.Cryst.Growth 147, 13 (1995)
3. xGaAs strained layer superlattice buffer layers", Appl. Phys Lett. 62, 154 (1993)
4. J. De Boeck, P. Demeester, and G. Borghs, "III-V on dissimilar substrates: Epitaxy and alternatives" J. Vac. Sci. Technol. A 12, 995 (1994)
5. E.A. Beam and Y.C. Kao, "The effect of reduced growth area by substrate patterning on misfit accommodation in molecular beam epitaxially grown InxGal-xAs/GaAs", J. Appl. Phys. 69, 4253 (1991)
6. Eli Yablonovitch, T. Gmitter, J. P. Harbison, and R. Bhat, "Extreme selectivity in the lift-off of epitaxial GaAs films", Appl. Phys. Lett. 51, 2222 (1987)
7. Jong-Hee Kim, Dae Ho Lim, and Gye Mo Yang, "Selective etching of AlGaAs/GaAs structures using the solutions of citric acid/H2O2 and de-ionized H20/buffered oxide etch", J. Vac. Sci. Technol. B 16, 558 (1998)
8. 1-xAs for AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor", J. Appl. Phys. 84, 3933 (1998)
9. S. Matsuo, K. Tateno, T. Nakahara, H. Tsuda and T. Kurokawa, "Use of polyimide bonding for hybrid integration of a vertical cavity surface emitting laser on a silicon substrate", Electron. Lett. 22, 1148 (1997)
10. Mitsuru Funato, Shizuo Fujita, and Shigeo Fujita, "Integration of GaN with Si using a AuGe-mediated wafer bonding technique", Appl. Phys. Lett. 77, 3959 (2000)
11. Karl Joachim Ebeling, "Analysis of vertical cavity surface emitting laser diodes (VCSEL)", Semiconductor quantum optoelectronic, ed. A. Miller, E. Ebrahimzeden and D.M. Finlayson, (A NATO Advanced Study Institute, 1998), pp.295-338
12. Carl W. Wilmsen and Rui Pu, "Heterogeneous Integration of Vertical- Cavity Surface-Emitting Lasers Arrays to CMOS Integrated Circuit", Heterogeneous Optoelectrronics Integration, ed. Elias Towe, SPIE Press, pp. 75-119