Stability of 180° domain in ferroelectric thin films

Journal of Applied Physics

Volumn 94, Issue 1, 2003, Pages 610-611

  Wang, Biao ^a,b   Woo, C H ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

^b HARBIN INSTITUTE OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; FERROELECTRIC MATERIALS; NUCLEATION; PHASE TRANSITIONS; RANDOM ACCESS STORAGE; SWITCHING;

SWITCHED DOMAINS;

FERROELECTRIC THIN FILMS;

EID: 0042842544     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1578529     Document Type: Article

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