메뉴 건너뛰기




Volumn 3, Issue , 2002, Pages 1277-1282

Low temperature characterization and modeling of IGBTS

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; FINITE DIFFERENCE METHOD; SEMICONDUCTOR DEVICE MODELS; TEMPERATURE;

EID: 0036446791     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (16)

References (18)
  • 1
    • 0033872882 scopus 로고    scopus 로고
    • Automotive electrical systems - The power electronics market of the future
    • February
    • J.G. Kassakian, "Automotive electrical systems - the power electronics market of the future," IEEE APEC Rec., pp. 3-9, February 2000.
    • (2000) IEEE APEC Rec. , pp. 3-9
    • Kassakian, J.G.1
  • 2
    • 0027816297 scopus 로고
    • Ultra-high efficiency power conversion using cryogenic MOSFETs and HT-superconductors
    • June
    • O.M. Mueller and K.G. Herd, "Ultra-high efficiency power conversion using cryogenic MOSFETs and HT-superconductors," IEEE PESC Rec., pp. 772-778, June 1993.
    • (1993) IEEE PESC Rec. , pp. 772-778
    • Mueller, O.M.1    Herd, K.G.2
  • 3
  • 4
    • 0026854659 scopus 로고
    • The low temperature behavior of thyristors
    • April
    • S. Menhart, J.L. Hudgins, and W.M. Portnoy, "The low temperature behavior of thyristors," IEEE Tran. ED, vol. 39, pp. 1011-1013, April 1992.
    • (1992) IEEE Tran. ED , vol.39 , pp. 1011-1013
    • Menhart, S.1    Hudgins, J.L.2    Portnoy, W.M.3
  • 6
    • 0001927816 scopus 로고
    • Temperature variation effects on the switching characteristics of mosgate devices
    • September
    • J.L. Hudgins, S. Menhart, W.M. Portnoy, and V.A. Sankaran, "Temperature variation effects on the switching characteristics of mosgate devices," EPE - MADEP Conf. Rec., pp. 262-266, September 1991.
    • (1991) EPE - MADEP Conf. Rec. , pp. 262-266
    • Hudgins, J.L.1    Menhart, S.2    Portnoy, W.M.3    Sankaran, V.A.4
  • 7
  • 8
    • 0032071510 scopus 로고    scopus 로고
    • Status and trends of power semiconductor device models for circuit simulation
    • May
    • R. Kraus and H.J. Mattausch, "Status and trends of power semiconductor device models for circuit simulation," IEEE Trans. PEL, vol. 13, no. 3, pp. 452-465, May 1998.
    • (1998) IEEE Trans. PEL , vol.13 , Issue.3 , pp. 452-465
    • Kraus, R.1    Mattausch, H.J.2
  • 9
    • 0033326358 scopus 로고    scopus 로고
    • A PSPICE model of the DG-EST based on the ambipolar diffusion equation
    • June
    • P.R. Palmer and B.H. Stark, "A PSPICE model of the DG-EST based on the ambipolar diffusion equation," IEEE PESC Rec., pp.358-363, June 1999.
    • (1999) IEEE PESC Rec. , pp. 358-363
    • Palmer, P.R.1    Stark, B.H.2
  • 10
    • 0036072956 scopus 로고    scopus 로고
    • Parameter extraction for a power diode circuit simulator model including temperature dependent effects
    • March 10-14
    • X. Kang, A. Caiafa, E. Santi, J.L. Hudgins, P.R. Palmer, "Parameter Extraction for a Power Diode Circuit Simulator Model Including Temperature Dependent Effects," IEEE APEC Record, Dallas, Texas, pp. 452-458, March 10-14, 2002.
    • (2002) IEEE APEC Record, Dallas, Texas , pp. 452-458
    • Kang, X.1    Caiafa, A.2    Santi, E.3    Hudgins, J.L.4    Palmer, P.R.5
  • 11
    • 0002340525 scopus 로고
    • Bipolar semiconductor device models for computer-aided design in power electronics
    • Sept.
    • Leturcq, Berraies, Debrie, Gillet, Kallala and Massol, "Bipolar semiconductor device models for computer-aided design in power electronics," 6th European Conference on Power Electronics, vol. 2, p. 84, Sept. 1995.
    • (1995) 6th European Conference on Power Electronics , vol.2 , pp. 84
    • Leturcq1    Berraies2    Debrie3    Gillet4    Kallala5    Massol6
  • 12
  • 14
    • 0033901058 scopus 로고    scopus 로고
    • Analysis by measurements and circuit simulations of the PT- and NPT-IGBT under different short-circuit conditions
    • February
    • M. Cotorogea, A. Claudio, and J. Aguayo, "Analysis by measurements and circuit simulations of the PT- and NPT-IGBT under different short-circuit conditions," IEEE APEC Rec., pp. 1115-1121, February 2000.
    • (2000) IEEE APEC Rec. , pp. 1115-1121
    • Cotorogea, M.1    Claudio, A.2    Aguayo, J.3
  • 15
    • 0014493888 scopus 로고
    • On the effective carrier lifetime in p-s-n rectifiers at high injection levels
    • H. Schlangenotto and W. Gerlach, "On the effective carrier lifetime in p-s-n rectifiers at high injection levels," Solid-State Electronics, vol. 12, pp. 267-275, 1969.
    • (1969) Solid-State Electronics , vol.12 , pp. 267-275
    • Schlangenotto, H.1    Gerlach, W.2
  • 16
    • 0011892078 scopus 로고    scopus 로고
    • A distributed model of IGBTs for circuit simulation
    • Leturcq, Debrie, Barraies, "A distributed model of IGBTs for circuit simulation," EPE 97 Conference Record, vol. 1, pp. 494-501, 1997.
    • (1997) EPE 97 Conference Record , vol.1 , pp. 494-501
    • Leturcq1    Debrie2    Barraies3
  • 17
    • 0033099614 scopus 로고    scopus 로고
    • Choosing a thermal model for electrothermal simulation of power semiconductor devices
    • Ammous, Ghedrida, Allard, Morel and Renault, "Choosing a thermal model for electrothermal simulation of power semiconductor devices", IEEE Trans. PEL, vol. 14, no. 2, pp. 300-307, 1999.
    • (1999) IEEE Trans. PEL , vol.14 , Issue.2 , pp. 300-307
    • Ammous1    Ghedrida2    Allard3    Morel4    Renault5
  • 18
    • 80053482342 scopus 로고
    • A dynamic electro-thermal model for the IGBT
    • A.R. Hefner Jr., "A dynamic electro-thermal model for the IGBT", IEEE Trans. IA, vol. 30, no. 2, pp. 394-405, 1994.
    • (1994) IEEE Trans. IA , vol.30 , Issue.2 , pp. 394-405
    • Hefner A.R., Jr.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.