2W Ku-band coplanar MMIC HPA using HBT for flip-chip assembly

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2002, Pages 441-444

  Fraysse, J P ^a   Vendier, O ^a   Soulard, M ^a   Auxemery, P ^b  

^a THALES ALENIA SPACE   (France)

^b United Microwave Semiconductors   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; COMPUTER SIMULATION; ELECTRIC POWER MEASUREMENT; FLIP CHIP DEVICES; FREQUENCIES; HETEROJUNCTION BIPOLAR TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SPACE APPLICATIONS; WAVEGUIDES;

COPLANAR TECHNOLOGY; FLIP CHIP ASSEMBLY; FLIP CHIP MOUNTING IMPACT; FREQUENCY RANGE; HIGH POWER AMPLIFIERS;

POWER AMPLIFIERS;

EID: 0036076199     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2002.1011650     Document Type: Article

References (7)

1. Power flip-chip assembly for space application using HBT in Ku band
2. Industrial GaInP/GaAs power HBT MMIC process
3. Reducing the effects of the mounting substrate on the performance of GaAs MMIC flip-chips
4. The current state of the art in coplanar MMICs
5. A non-quasi-static model of GaInP/GaAs HBT for power applications
6. Closed loop stability analysis of microwave amplifiers
7. A unified approach for the linear and nonlinear stability analysis of microwave circuits using commercially available tools