Comparison of the ion induced charge collection in Si epilayer and SOI devices

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 210, Issue , 2003, Pages 221-226

  Hirao, Toshio ^a   Mori, Hidenobu ^b   Laird, Jamie Stuart ^a   Onoda, Shinobu ^b   Itoh, Hisayoshi ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b TOKAI UNIVERSITY   (Japan)

Author keywords

Collected charge; Funneling effect; Heavy ion microbeam; Single event phenomena

Indexed keywords

ELECTRIC CHARGE; ELECTRIC CURRENTS; EPITAXIAL GROWTH; HEAVY IONS; ION IMPLANTATION; MICROELECTRONICS; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES;

SINGLE-EVENT PHENOMENA;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0042513883     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(03)01011-5     Document Type: Conference Paper

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