New donors in heat-treated Cz-Si, their components and formation kinetics

Solid State Phenomena

Volumn 47-48, Issue , 1996, Pages 259-266

  Emtsev, V V ^a   Oganesyan, G A ^a   Schmalz, K ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b Institute of Semiconductor Physics   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; HEAT TREATMENT; SEMICONDUCTOR DEVICE MANUFACTURE;

ELEVATED TEMPERATURE; FORMATION KINETICS; FORMATION PROCESS; LOWER TEMPERATURES; SHALLOW DONORS; TEMPERATURE RANGE; THERMAL DONOR; THERMAL DOUBLE DONORS;

SILICON COMPOUNDS;

EID: 17544369410     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Article

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