Selective area growth of InP on InP precoated silicon substrate by hydride vapor phase epitaxy

Conference Proceedings-International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2002, Pages 339-342

  Sun, Y T ^a   Napierala, J ^a   Lourdudoss, S ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

COATING TECHNIQUES; CRYSTALLOGRAPHY; SILICON; SUBSTRATES; SUPERSATURATION; VAPOR PHASE EPITAXY;

HYDRIDE VAPOR PHASE EPITAXY;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0036051582     PISSN: 10928669     EISSN: None     Source Type: Journal    
DOI: 10.1109/ICIPRM.2002.1014410     Document Type: Article

References (11)