Impurity effect on recombination processes in InP

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 5 SUPPL. B, 1996, Pages 2930-2933

  Yoshinaga, Hiroshi ^a   Matsumori, Tokue ^a   Uehara, Fumiya ^a  

^a TOKAI UNIVERSITY   (Japan)

Author keywords

Configuration coordinate diagram; Deep impurity level; Impurity effect; InP; Nonradiative recombination process; Photoacoustic spectroscopy; Photoluminescence; Radiative recombination process; Shallow impurity level; Strain

Indexed keywords

EFFICIENCY; IMPURITIES; MICROWAVE DEVICES; PHOTOACOUSTIC SPECTROSCOPY; PHOTOLUMINESCENCE; SENSITIVITY ANALYSIS;

CONFIGURATION COORDINATE DIAGRAM; DEEP IMPURITY LEVEL; IMPURITY EFFECT; NONRADIATIVE RECOMBINATION PROCESS; RADIATIVE RECOMBINATION PROCESS;

OPTOELECTRONIC DEVICES;

EID: 0030143715     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.2930     Document Type: Article

References (30)

1. O. K. Kim, S. R. Forrest, W. A. Bonner and R. G. Smith: Appl. Phys. Lett. 39 (1981) 402.
2. U. Koren, K. L. Yu, T. R. Chen, N. Bar-Chaim, S. Margalit and A. Yariv: Appl. Phys. Lett. 40 (1982) 643.
3. A. Rosencwaig: Phys. Today 28 (1975) 23.
4. W. Jackson and N. M. Amer: J. Appl. Phys. 51 (1980) 3343.
5. J. B. Mullin, A. Royle, W. Straughan, P. J. Tufton and E. W. Williams: J. Cryst. Growth 13/14 (1972) 640.
6. E. W. Williams, W. Elder, M. G. Astles, M. Webb, J. B. Mullin, B. Straughan and P. J. Tufton: J. Electrochem. Soc. 120 (1973) 1741.
7. M. G. Astles, F. G. H. Smith and E. W. Williams: J. Electrochem. Soc. 120 (1973) 1750.
8. M. Bugajaski and W. Lewandowski: J. Appl. Phys. 57 (1985) 521.
9. A. Sibille and E. V. K. Rao: J. Cryst. Growth 64 (1983) 194.
10. K. Wasa, K.Tsubouchi and N. Mikoshiba: Jpn. J. Appl. Phys. 19 (1980) L653.
11. H. Yoshinaga, J. Kawai, T. Agui, F. Uehara and T. Matsumori: Nucl. Instrum. & Methods B 80/81 (1993) 591.
12. N. Mikoshiba, K. Wasa and K. Tsubochi: 1980 IEEE Ultrasonics Symp. Proc. (IEEE, New York, 1980) p. 658.
13. H. Yoshinaga: Dr. Thesis, Faculty of Engineering, Tokai University, Kanagawa, 1995.
14. W. J. Turner, W. E. Reese and G. D. Pettit: Phys. Rev. 136 (1964) A1467.
15. E. Burstein: Phys. Rev. 93 (1954) 632.
16. T. S. Moss: Proc. Phys. Soc. (London) B 76 (1954) 775.
17. R. Coquille, Y. Toudic, M. Gauneau, G. Grandpierre and J. C. Paris: J. Cryst. Growth 64 (1983) 23.
18. A. Yamamoto, S. Shinoyama and C. Uemura: J. Electrochem. Soc. 128 (1981) 585.
19. Landolt-Börnstein III/17a, ed. O. Madelung (Springer-Verlag, Berlin, 1982) p. 284.
20. O. Mizuno and H. Watanabe: Electron. Lett. 11 (1972) 118.
21. G. Bremond, A. Nouailhat, G. Guillot and B. Cockayne: Solid State Commun. 41 (1982) 477.
22. M. Cardona: J. Appl. Phys. 36 (1965) 2181.
23. H. Tokumoto, M. Tokumoto and T. Ishiguro: J. Phys. Soc. Jpn. 50 (1981) 602.
24. Y. Toyozawa: Dynamical Processes in Solid State Optics, eds. R. Kubo and H. Kamimura (Shokabo and Benjamin, Tokyo, 1967) p. 90.
25. Y. Shinozuka and Y. Toyozawa: Kotai Buturi 14 (1979) 526 [in Japanese].
26. Y. Shinozuka: Oyo Buturi 51 (1982) 192 [in Japanese].
27. Y. Toyozawa: Solid-State Electron. 21 (1978) 1313.
28. C. H. Henry and D. V. Lang: Phys. Rev. B 15 (1977) 989.
29. Y. Shinozuka: Oyo Buturi 57 (1988) 1877 [in Japanese].
30. Y. Shinozuka: Jpn. J. Appl. Phys. 32 (1993) 4560.