A 2-bit MONOS nonvolatile memory cell based on asymmetric double gate MOSFET structure

IEEE Electron Device Letters

Volumn 24, Issue 8, 2003, Pages 518-520

  Yuen, Kam Hung ^a   Man, Tsz Yin ^a   Chan, Alain C K ^a   Chan, Mansun ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Asymmetric double gate MOSFET; Channel hot electron injection; FN tunneling; MONOS; Nonvolatile memory

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRON TUNNELING; FLASH MEMORY; GATES (TRANSISTOR); MOSFET DEVICES; POLYSILICON; SEMICONDUCTOR DEVICE STRUCTURES;

ASYMMETRIC DOUBLE GATE; CHANNEL HOT ELECTRON; FOWLER-NORDHEIM TUNNELING; METAL-OXIDE-NITRIDE-OXIDE-SEMICONDUCTOR; SHORT CHANNEL EFFECT;

NONVOLATILE STORAGE;

EID: 0042387925     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.815157     Document Type: Article

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