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Volumn 12, Issue 3, 2003, Pages 489-494

Generation of a pulsed ion beam with a tuned electronic beam switch

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC VARIABLES MEASUREMENT; ELECTRON BEAMS; ION SOURCES; SEMICONDUCTING GALLIUM ARSENIDE; SPUTTER DEPOSITION; SWITCHING;

EID: 0042364994     PISSN: 09630252     EISSN: None     Source Type: Journal    
DOI: 10.1088/0963-0252/12/3/326     Document Type: Article
Times cited : (15)

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  • 2
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    • Ion- and electron-assisted gas-surface chemistry-an important effect in plasma etching
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    • O'Brien W L, Paulsen-Boaz C M and Rhodin T N 1988 A critical discussion of emission mechanism and reaction rates for the ion-assisted etching of GaAs(100) J. Appl. Phys. 64 6523
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    • O'Brien, W.L.1    Paulsen-Boaz, C.M.2    Rhodin, T.N.3
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    • 0000751474 scopus 로고
    • The thermal and ion-assisted reactions of GaAs(100) with molecular chlorine
    • Balooch M, Olander D R and Siekhaus W J 1986 The thermal and ion-assisted reactions of GaAs(100) with molecular chlorine J. Vac. Sci. Technol. B 4 794
    • (1986) J. Vac. Sci. Technol. B , vol.4 , pp. 794
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  • 10
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    • Horton, C.C.1    Eck, T.G.2    Hoffman, R.W.3
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    • Bipolar extraction neutralizer: Time resolved characterization
    • Korzec D, Dahlhaus R and Engemann J 2000 Bipolar extraction neutralizer: time resolved characterization Rev. Sci. Instrum. 71 1090
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    • Korzec, D.1    Dahlhaus, R.2    Engemann, J.3
  • 12
    • 0001037522 scopus 로고
    • 2 chemisorption onto GaAs(100) c(8 × 2), GaAs(100) c(2 × 8), and GaAs(110) (1 × 1) surfaces
    • 2 chemisorption onto GaAs(100) c(8 × 2), GaAs(100) c(2 × 8), and GaAs(110) (1 × 1) surfaces J. Chem. Phys. 101 1582
    • (1994) J. Chem. Phys. , vol.101 , pp. 1582
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    • The energy balance at substrate surfaces during plasma processing
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    • Sigmund, P.1
  • 18
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    • Reactive etching of semiconductor surfaces using an electronically chopped low energy broad beam ion source
    • Dienelt J, Zimmer K and Neumann H 2003 Reactive etching of semiconductor surfaces using an electronically chopped low energy broad beam ion source Surf. Coat. Technol. 174-175 157
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.