A one-dimensional model to predict the growth conditions of In xGa1-xAs alloy crystals grown by the traveling liquidus-zone method

Journal of Crystal Growth

Volumn 258, Issue 1-2, 2003, Pages 49-57

  Nakamura, Hirohiko ^a,b   Hanaue, Yasuhiro ^a,c   Kato, Hirokazu ^a,c   Kinoshita, Kyoichi ^a   Yoda, Shinichi ^a  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^b MITSUBISHI RESEARCH INSTITUTE   (Japan)

^c MITSUBISHI MATERIALS CORPORATION   (Japan)

Author keywords

A1. Directional solidification; A1. Growth models; A1. Mass transfer; A2. Growth from melt; A2. Traveling solvent zone growth; B2. Semiconducting III V materials

Indexed keywords

COMPOSITION; MASS TRANSFER; MATHEMATICAL MODELS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SINGLE CRYSTALS; SOLIDIFICATION; SOLVENTS; TERNARY SYSTEMS;

TERNARY ALLOYS;

CRYSTAL GROWTH FROM MELT;

EID: 0042331078     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01499-4     Document Type: Article

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