Band discontinuity fluctuations and local chemistry at the GaSe-Si interface

Applied Physics Letters

Volumn 73, Issue 13, 1998, Pages 1859-1861

  Zacchigna, M ^a   Sirigu, L ^a   Almeida, J ^a   Berger, H ^a   Gregoratti, L ^b   Marsi, M ^b   Kiskinova, M ^b   Margaritondo, G ^a  

^a EPFL   (Switzerland)

^b SINCROTRONE TRIESTE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042304322     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122306     Document Type: Article

References (21)

1. F. Capasso and G. Margaritondo, Heterojunction Band Discontinuities: Physics and Device Applications (North-Holland, Amsterdam 1987);
2. G. Margaritondo, Electronic Structure of Semiconductor Heterojunctions (Jaca, Milan, and Kluwer, Dodrecht 1988);
3. M. Peressi, B. Binggeli, and A. Baldereschi, J. Phys. D 31, 1273 (1998);
4. Contacts to Semiconductors, edited by L. J. Brillson (Noyes, Park Ridge, NJ, 1993);
5. A. Franciosi and C. G. van der Walle, Surf. Sci. Rep. 25, 1 (1996);
6. Y. Huttel, P. Soukiassian, P. S. Mangat, and Z. Hurych, Surf. Sci. 352, 845 (1996);
7. A. Kahn, Surf. Sci. 299, 469 (1994);
8. R. H. Williams, Surf. Sci. 251, 12 (1991), and references therein
9. For other recent results about lateral changes in the band lineup and in semiconductor energy barriers, see for example: A. E. Fowell, A. A. Cafolla, B. E. Richardson, T. H. Shen, M. Elliott, D. I. Westwood, and R. H. Williams, Appl. Surf. Sci. 56-58, 622 (1992);
10. T. Clausen, O. Leistiko, Ib Chorkendorff, and J. Larsen, Appl. Surf. Sci. 74, 287 (1994);
11. F. Gozzo, H. Berger, I. R. Collins, G. Margaritondo, W. Ng, A. K. Ray-Chaudhuri, S. Liang, S. Singh, and F. Cerrina, Phys. Rev. B 51, 5024 (1995).
12. J. Almeida, I. Vobornik, H. Berger, M. Kiskinova, A. Kolmakov, M. Marsi, and G. Margaritondo, Phys. Rev. B 55, 4899 (1997).
13. R. R. Daniels, G. Margaritondo, C. Quaresima, M. Capozi, P. Perfetti, and F. Lévy, Solid State Commun. 51, 495 (1984).
14. R. R. Daniels, G. Margaritondo, P. Perfetti, C. Quaresima, and F. Lévy, J. Vac. Sci. Technol. A 3, 979 (1985).
15. R. Rosei and R. P. Walker, Rev. Sci. Instrum. 60, 1809 (1989).
16. B. Diviacco, R. Bracco, C. Poloni, R. P. Walker, and D. Zangrando, Rev. Sci. Instrum. 63, 388 (1992).
17. M. Marsi, L. Casalis, L. Gregoratti, S. Gunther, A. Kolmakov, J. Kovac, D. Lonza, and M. Kishinova, J. Electron Spectrosc. Relat. Phenom. 84, 73 (1997).
18. R. H. Williams, A. McKinley, G. J. Hughes, V. Montgomery, and I. T. McGovern, J. Vac. Sci. Technol. 21, 594 (1982).
19. G. J. Hughes, A. McKinley, R. H. Williams, and I. T. McGovern, J. Phys. C 15, L159 (1982).
20. R. D. Bringans and M. A. Olmstead et al., Phys. Rev. B 39, 12895 (1989).
21. A. Amokrane, C. A. Sébenne, A. Cricenti, C. Ottaviani, F. Proix, and M. Eddrief, Appl. Surf. Sci. 123/124, 619 (1998).