SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 352-354, Issue , 1996, Pages 845-849

Antimony on metal and semiconductor surfaces: Interface formation and passivation

(4) Huttel, Y a,b Soukiassian, P a,b,c Mangat, P S c,d Hurych, Z c

a CEA SACLAY (France)

b UNIVERSITÉ PARIS SACLAY (France)

c NORTHERN ILLINOIS UNIVERSITY (United States)

d UNIVERSITY OF WISCONSIN MADISON (United States)

Author keywords

Aluminum; Antimony; III V semiconductor; Metal semiconductor interfaces; Oxidation; Photoelectron spectroscopy; Polycrystalline thin films

Indexed keywords

ANTIMONY; ELECTRON ENERGY LEVELS; INTERFACES (MATERIALS); OXIDATION; PASSIVATION; PHOTOELECTRON SPECTROSCOPY; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SURFACES; SYNCHROTRON RADIATION; THIN FILMS;

CORE LEVEL; INTERFACE FORMATION; VALENCE BAND PHOTOEMISSION SPECTROSCOPY;

SURFACE STRUCTURE;

EID: 0030141696 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/0039-6028(95)01222-2 Document Type: Article

Times cited : (6)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.