Metal-ferroelectric PbTiO3-semiconductor switch diode (MFSS) for room-temperature high-speed infrared sensing application

IEEE Transactions on Electron Devices

Volumn 43, Issue 11, 1996, Pages 2019-2021

  Chen, F Y ^a   Fang, Y K ^a   Shu, C Y ^a   Chen, Jiann Ruey ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC VARIABLES MEASUREMENT; FERROELECTRIC MATERIALS; IMAGE SENSORS; SEMICONDUCTOR DIODES; SPUTTER DEPOSITION; THIN FILMS;

METAL FERROELECTRIC SEMICONDUCTOR SWITCH (MFSS) DIODES; SWITCHING VOLTAGE;

SEMICONDUCTOR SWITCHES;

EID: 0030287907     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.543041     Document Type: Article

References (6)

1. K. Sakurai Matsushita uses PbTiO $_3$ thin film for high response speed pyroelectric IR imager Nikkei Electronics Asia 36 37 Jan. 1993
2. Y. K. Fang F. Y. Chen J. D. Hwang B. C. Fang J.-R. Chen Tin oxide gated metal-insulator-semiconductor switch diode for room-temperature high-speed gas sensing applications Appl. Phys. Lett. 62 490 1993
3. C. Kittel Introduction to Solid State Physics 6th 1991 WIley New York 13
4. M. Okuyama Y. Hamakawa Room-temperature-operated high-speed infrared photosensor Jpn. Annu. Rev. Electron., Comput. Telecommun. 21 265 1985
5. S. M. Sze Physics of Semiconductor Devices 2nd 1981 Wiley New York 9
6. Y. Matsui Growth of ferroelectric thin film and its application to semiconductor heterojunction devices 15 16 Feb. 1982 Ph.D. dissertation Japan, Osaka, Toyonaka