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7
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17
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84894021401
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note
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We have also assumed the deep center bound states to have a Gaussian distribution with a standard deviation of Q.078eV, as is consistent with the scanning-tunneling-spectroscopy measurements of Feenstra [15].
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18
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0000163155
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Optical emission properties of semi-insulating GaAs grown at low temperatures by molecular beam epitaxy
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R. E. Viturro, M. R. Melloch, and J. M. Woodall, "Optical emission properties of semi-insulating GaAs grown at low temperatures by molecular beam epitaxy," Appl. Phys. Lett. 60, 3007-3009, (1992).
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Viturro, R.E.1
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Woodall, J.M.3
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