High power heterojunction GaAs switch IC with P-1 dB of more than 38 dBm for GSM application

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1998, Pages 229-232

  Masuda, Michitaka ^a   Ohbata, Noriyuki ^a   Ishiuchi, Hiroaki ^a   Onda, Kazuhiko ^a   Yamamoto, Ryuichiro ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CELLULAR TELEPHONE SYSTEMS; DIGITAL RADIO; HETEROJUNCTIONS; INSERTION LOSSES; INTEGRATED CIRCUIT LAYOUT; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR SWITCHES; SWITCHING CIRCUITS;

GLOBAL SYSTEMS FOR MOBILE COMMUNICATION (GSM); HETEROJUNCTION FIELD EFFECT TRANSISTORS (HJFET);

FIELD EFFECT TRANSISTORS;

EID: 0032307978     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)