Chapter 8 Rutherford Backscattering Studies of Ion Implanted Semiconductors

Semiconductors and Semimetals

Volumn 45, Issue C, 1997, Pages 239-260

  Nipoti, Roberta ^a   Servidori, Marco ^a  

^a CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ION IMPLANTED;

RUTHERFORD BACKSCATTERING SPECTROSCOPY;

EID: 0041382132     PISSN: 00808784     EISSN: None     Source Type: Book Series    
DOI: 10.1016/S0080-8784(08)62680-0     Document Type: Article

References (37)

1. Addamiano A., Anderson G.W., Comas J., Hughens H.L., and Lucke W. "Ion Implantation Effects of Nitrogen, Boron, and Aluminum in Hexagonal Silicon Carbide,". J. Electrochem. Soc. 119 (1972) 135-1362
2. Albertazzi E., Bianconi M., Lulli G., Nipoti R., and Cantiano M. "Different Methods for the Determination of Damage Profiles in Si from RBS-Channeling Spectra: A Comparison,". Nucl. Instrum. Meth. B118 (1996) 128-132
3. Bentini G.G., Bianconi M., and Servidori M. "Comparative Analysis of Extended Defect Depth Profiles in Silicon by Rutherford Backscattering, X-Ray and Electron Microscopy,". Nucl. Instrum. Meth. B18 (1987) 145-152
4. Bianconi M., Nipoti R., Cantiano M., Gasparotto A., and Sambo A. "RBS-Channeling Spectra: Simulation of As-Implanted Si Samples Through an Empirical Formula for <100> Axial Dechanneling of He in Silicon,". Nucl. Instrum. Meth. B84 (1994) 507-511
5. Bohn H.G., Williams J.M., McHargue C.J., and Begun G.M. "Recrystallization of Ion-Implanted α-SiC,". J. Material Res. 2 (1987) 107-116
6. Breese M.B.H., King P.J.C., Smulders P.J.M., and Grime G.W. "Dechanneling of MeV Protons by 60° Dislocation,". Phys. Rev. B 51 (1995) 2742-2750
7. Campbell A.B., Shewchun J., Thompson D.A., Davies J.A., and Michel J.B. "Nitrogen Implantation in SiC: Lattice Disorder and Foreign-Atom Location.". In: Namba S. (Ed). Ion Implantation in Semiconductors (1974), Plenum Press, New York 291-298
8. Chu W.K., Mayer J.W., and Nicolet M.A. Back-scattering Spectrometry (1978), Academic Press, London
9. 11B Ions,". J. Appl. Phys. 48 (1977) 4234-4240
10. + Ion Implantation and Annealing,". J. Material Res. 5 (1990) 352-359
11. Feldman C., Mayer J.W., and Picraux S.T. Materials Analysis by Ion Channeling (1982), Academic Press, London
12. Föhl A., Emrick R.M., and Carstanjen H.D. "A Rutherford Back-Scattering Study of Ar- and Xe-Implanted Silicon Carbide,". Nucl. Instrum. Meth. B65 (1992) 335-340
13. Gärtner K., Hehl K., and Schlotzhauer G. "Axial Dechanneling: I. Perfect Crystal,". Nucl. Instrum. Meth. 216 (1983) 275-286
14. Gärtner K., Hehl K., and Schlotzhauer G. "Axial Dechanneling: II. Point Defects,". Nucl. Instrum. Meth. 4 (1984) 55-62
15. Gärtner K., Hehl K., and Schlotzhauer G. "Axial Dechanneling: III, Dislocations,". Nucl. Instrum. Meth. 4 (1984) 63-71
16. Goldberg R.D., Simpson T.W., Mitchel I.V., and Shultz P.J. "Studies of Dislocation Formation in Annealed Self-Ion Irradiated Silicon,". Material Research Society Symposium Proceedings 316 (1994) 39-44
17. Heera V., Kögler R., Skorupa W., and Stomenos J. "Amorphization and Recrystallization of 6H-SiC by Ion Beam Irradiation,". Material Research Society Symposium Proceedings 339 (1994) 197-202
18. Hirano Y., and Inada T. "Nitrogen Implantation in (100)-β-SiC Layers Grown on Si Substrates,". J. Appl. Phys. 77 (1995) 1020-1028
19. Holland O.W., and White C.W. "Ion-Induced Damage Amorphization in Si,". Nucl. Instrum. Meth. B59/60 (1991) 353-362
20. Holland O.W., White C.W., El-Gohr M.K., and Budai J.D. "MeV, Self-Ion Implantation in Si at Liquid Nitrogen Temperature; A Study of Damage Morphology and Its Anomalous Annealing Behavior,". J. Appl. Phys. 68 (1990) 2081-2086
21. Inada T., Nishida A., Kanazawa M., and Hasebe H. "Annealing Characteristics and Electrical Properties of 1-MeV Arsenic-Ion-Implanted Layers in Silicon,". J. Appl. Phys. 68 (1990) 5555-5563
22. Jones K.S., Prussin S., and Weber E.R. "A Systematic Analysis of Defects in Ion-Implanted Silicon,". Appl. Phys. A45 (1988) 1-34
23. King P.J.C., Breese M.B.H., Smulders P.J.M., Wilshaw P.R., and Grime G.W. "Observation of a Blocking to Channeling Transition for MeV Protons at Stacking Faults in Silicon,". Phys. Rev. Lett. 74 (1995) 411-414
24. King P.J.C., Breese M.B.H.P.J.M., Wilshaw P.R., and Grime G.W. "Stacking-Fault Imaging Using Transmission Ion Channeling,". Phys. Rev. B 51 (1995) 2732-2741
25. 11B-Doped) Amorphous Si,". J. Appl. Phys. 53 (1982) 4399-4405
26. Mazzer M., Drigo A.V., and Romanato F. "Dechanneling by Misfit Dislocation in III-V Semicoductor Heterostructures,". Nucl. Instrum. Meth. B64 (1992) 103-107
27. Olson G.L., and Roth J.A. "Kinetics of Solid Phase Crystallization in Amorphous Silicon,". Material Science Reports 3 (1988) 1-77
28. Picraux S.T., Follstaedt D.M., Baeri P., Campisano S.U., Foti G., and Rimini E. "Depth Profile Studies of Extended Defects Induced by Ion Implantation in Si and Al,". Radiation Effects 49 (1980) 75-80
29. Rao M.V., Griffiths P., Holland O.W., Kelner G., Freitas J.A., Simons D.S., Chi P.H., and Ghezzo M. "Al and B Ion-Implantation in 6H- and 3C-SiC,". J. Appl. Phys. 77 (1995) 2479-2485
30. Santos J.H.R., Grande P.L., Boudinov H., and Behar M. "Stopping Power and Charge Equilibration Process for Channeled He Ions Along <100> and <110> Directions of Si Crystal,". Proceedings of the Ion Implantation Technology-94 Conference (1995), North Holland, Amsterdam 711-715
31. Santos J.H.R., Grande P.L., Boudinov H., Behar M., Stoll R., Klatt C., and Kalbitzer S. "Electronic Stopping Power of <100> Axial Channeled He-Ions in Si Crystal.". Nucl. Instrum. Meth. B106 (1995) 51-54
32. Schreutelkamp R.J., Custer J.S., Liefting J.R., Lu W.X., and Saris F.W. "Preamorphization Damage in Ion-Implanted Silicon,". Material Science Reports 6 (1991) 275-366
33. Sigmund P., and Winterbon K.B. "Small-Angle Multiple Scattering of Ions in the Screened Coulomb Region,". Nucl. Instrum. Meth. 119 (1974) 541-557
34. Spitznagel J.A., Wood S., Choyke W.J., Devaty R.P., and Ruan J. "Amorphization and Annealing of 6H SiC Implanted with n-Type, p-Type or Isovalent Dopants,". Material Research Society Symposium Proceedings 147 (1989) 113-118
35. Zaumseil P., Winter U., Cembali F., Servidori M., and Sourek Z. "Determinations of Dislocation Loop Size and Density in Ion Implanted and Annealed Silicon by Simulation of Triple Crystal X-ray Rocking Curves,". Phys. Stat. Sol. (a) 100 (1987) 95-104
36. Ziegler J.F. "Determination of Lattice Disorder Profiles in Crystals by Nuclear Backscattering,". J. Appl. Phys. 43 (1971) 2973-2981
37. Ziegler J.F. The Stopping and Ranges of Ions in Matter (1977), Pergamon Press, New York