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Volumn 103, Issue 1, 2003, Pages 1-8

Growth and nucleation of pores in n-type porous silicon and related photoluminescence

Author keywords

AFM; FTIR; PL; Porous silicon; SEM; XRD

Indexed keywords

ANODIC OXIDATION; ATOMIC FORCE MICROSCOPY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; NUCLEATION; PHOTOLUMINESCENCE; POROSITY; SCANNING ELECTRON MICROSCOPY; SURFACE PROPERTIES; X RAY DIFFRACTION ANALYSIS;

EID: 0042122372     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(03)00126-0     Document Type: Article
Times cited : (8)

References (24)
  • 24
    • 0004140205 scopus 로고    scopus 로고
    • L.T. Canham. IEE INSPEC, London: The Institution of Electrical Engineers
    • Halimaoui A. Canham L.T. Properties of Porous Silicon, IEE INSPEC. 1997;12 The Institution of Electrical Engineers, London.
    • (1997) Properties of Porous Silicon , pp. 12
    • Halimaoui, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.