Structural characteristics of p-type porous silicon and their relation to the nucleation and growth of pores

Journal of Porous Materials

Volumn 9, Issue 1, 2002, Pages 57-66

  Pascual, A ^a   Fernandez J F ^a   Sanchez C R ^a   Manotas, S ^b   Agullo Rueda F ^b  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^b INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

Author keywords

Micro Raman spectroscopy; Nucleation and growth; Porous silicon

Indexed keywords

CRYSTAL STRUCTURE; DISSOLUTION; GROWTH (MATERIALS); NUCLEATION; POROSITY; RAMAN SPECTROSCOPY; THICKNESS MEASUREMENT;

ANODIZATION TIME; CRYSTALLITE SIZE; DISSOLVED MASS; MAXIMUM POROUS LAYER THICKNESS; MICRO-RAMAN SPECTROSCOPY; POROUS LAYER FORMATION;

POROUS SILICON;

EID: 0036502370     PISSN: 13802224     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1014312107140     Document Type: Article

References (22)